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0:00 Recap of NMOS at inversion 14:00 Threshold voltage equation 16:33 Surface potential 19:15 Depletion voltage 22:45 Flat band voltage 37:07 Typical values of Phi_MS and Vt 47:57 Example: calculating threshold voltage 1:06:17 Methods of controlling threshold From Module 6 - MOSFETs ECE 5550 Fall 2021 Solid State Electronics ruclips.net/p/PLqYqvTonHe8-OvB045oBvDkqp2JTUmKyG Wayne State Universi...

0:00 Recap of MOSFET inversion, and modes of operation 7:17 Example: calculating MOSFET currents 27:50 MOS energy band diagram at equilibrium 36:58 MOS energy band diagram at accumulation 47:30 MOS energy band diagram at depletion 53:48 MOS energy band diagram at inversion 1:00:52 MOS energy band diagram at strong inversion 1:04:27 MOS charge distribution at strong inversion 1:15:13 Electrostat...

0:00 Overview of topics 2:15 Motivation for MOSFETs 11:00 Moore's law 20:08 NMOS and PMOS overview 29:35 IV characteristics 40:12 MOSFETs in digital circuits 43:38 Digital switching using semiconductor inversion 50:07 Structure and physical model 53:36 MOSFET structure at inversion 1:00:17 Triode region 1:12:27 Derivation of current in Triode region 1:25:36 Saturation region 1:28:41 NMOS vs. PM...

Topics: 0:00 Introduction 6:10 Work function: physical model 9:12 Work function: energy band model 15:40 N-type Schottky Barrier: energy band model 27:17 N-type Schottky Barrier: physical model 32:20 N-type Schottky barrier: forward reverse bias 45:15 P-type Schottky barrier 50:31 Ohmic metal semiconductor junctions 55:32 N-type ohmic junction 59:07 P-type ohmic junction 1:00:44 Tunneling type ...

1:45 Steady state circuit model of diode 15:21 Diode half wave rectifier 20:23 Zener regulator 24:29 Transient behavior of diode review of various states 31:06 Junction capacitance 44:06 Charge storage transient 46:41 Response to square wave 51:34 Photodiodes 54:11 Photodiode operation and current components 1:09:21 Total photodiode current 1:10:57 Open and short circuit characteristics 1:16:02...

Topics: 0:00 Deriving ideal diode equation (continued from 5C) 8:39 Example: Calculating diode current 20:25 Diode current distributions 54:11 Reverse bias: energy band model 57:21 Reverse bias: carrier distributions 1:01:10 Reverse bias: calculating current 1:02:25 Zener breakdown 1:14:47 Avalanche breakdown 1:27:30 Diode design 1:35:06 Steady state circuit model of diode From Module 5 - Semic...

Topics include: - Energy band model in equilibrium and forward bias - Carrier concentrations in equilibrium and forward bias - Ideal diode equation From Module 5 - Semiconductor Junctions ECE 5550 Fall 2021 Solid State Electronics ruclips.net/p/PLqYqvTonHe8-OvB045oBvDkqp2JTUmKyG Wayne State University Prof. Amar Basu

Physics of the depletion region at equilibrium, including: - Charge density profile - Space charge neutrality - Electric field profile - Electrostatic potential profile - Calculating total charge, maximum electric field, and depletion widths From Module 5 - Semiconductor Junctions ECE 5550 Fall 2021 Solid State Electronics ruclips.net/p/PLqYqvTonHe8-OvB045oBvDkqp2JTUmKyG Wayne State University ...

Topics include: 00:00 Recap of previous lecture 03:52 Carrier diffusion 20:14 Fick's law 30:52 Revisit carrier lifecycle 35:02 Combining diffusion and drift 54:26 Diffusion and mobility coefficients, Einstein equation 1:00:36 Continuity equation 1:16:29 Example of continuity equation: one sided injection 1:24:58 Haynes Shockley Experiment 1:32:40 Room temperature properties of Si, Ge, and GaAs ...

Topics: 00:00 Intro and recap of previous lecture 03:55 Equilibrium, Steady state, and transient stimuli 11:59 Steady state carrier generation from fixed illumination 39:40 Quasi fermi levels 51:56 Transient carrier generation from pulse illumination 59:54 Carrier lifetime 1:07:06 Example of carrier concentration due to pulse illumination 1:17:20 Photoconductors From Module 4 - Excess Carriers ...

Topics: 00:00 Overview of module 4 02:48 Carrier processes and lifecycle 06:23 Carrier generation 13:00 Optical absorption in semiconductors 28:08 Recombination 31:50 Generation and recombination at equilibrium 44:44 Generation and recombination event 1:17:27 Direct vs indirect recombination 1:24:20 Luminescence From Module 4 - Excess Carriers ECE 5550 Fall 2021 Solid State Electronics ruclips....

Topics: 0:00 Intro 17:31 Physical model 50:21 Energy band model 1:12:03 Carrier distributions before and after contact 1:21:41 Deriving built in potential V0 1:25:42 Example: 2 ways to calculate V0 From Module 5 - Semiconductor Junctions ECE 5550 Fall 2021 Solid State Electronics ruclips.net/p/PLqYqvTonHe8-OvB045oBvDkqp2JTUmKyG Wayne State University Prof. Amar Basu

0:00 Recap of last lecture and overview 3:03 Revisit electrical current, Ohms law 5:45 Drift current in semiconductors: charge density, velocity, mobility, current density 21:40 Example: calculating hole velocity 26:27 Resistance and conductivity 38:15 Scattering and mobility 53:37 Lattice and impurity scattering 59:16 Mobility dependence on temperature and doping 1:08:20 Structure of an integr...

0:00 Recap from previous lecture 5:42 Example: Fermi-Dirac probabilities 18:03 Density of States 25:15 Carrier concentrations at Conduction band 27:29 Carrier concentrations in n-type, p-type, and intrinsic 35:12 Multiple dopants 55:24 Hole and electron concentrations inversely related (np=ni^2) 1:04:33 Carrier concentration vs. Fermi level 1:10:23 Example: Carrier concentrations from energy ba...

3B - electrons and holes, intrinsic and doped semiconductors, carrier statistics

3A - Silicon bonding and band structure

2C - Quantum mechanical model of atom and electronic configuration

2B - Debroglie equation

2A - Bohr model of the atom and wave-particle duality

1B - Semiconductor crystal structures and manufacturing

1A - Crystal structures in semiconductors

0B - Applications of semiconductor devices in modern electronics

0A - Introduction and Emerging Trends in Semiconductors

Course Syllabus and Introductions

4C - Electromagnets and Magnetic Materials

4B - Electric motors, Torque, Biot Savart Law, Ampere's Law

4A - Lorentz Force, Hall Effect Sensors

3G - Electrostatic Sensing, Energy, and Forces

3F - Dielectric Materials, Electrostatics at Interfaces, Capacitors